Work

Ultrahigh PID-Resistance for Mono Silicon PERC Solar Cells by Using Industrial Mass-Production Technology

Year: 2016

Type: article

Abstract: In this paper, using the industrial mass-production technology on commercially available 156 mm × 156 mm p-type Czochralski-grown crystalline mono silicon wafers, the best cell efficiencies more than 21% are demonstrated. We improved the solar cell devices by improving front side anti-reflection coating and back side process parameter which results in higher open circuit voltages and short circuit current. Besides, the mono PERC solar cell process pass the UL/ITRI potential induced degradation (PID) test which condition was indicated to be 85 degree Celsius and 85% RH in climatic chamber apply -1500 V for 300 hours.

Source: EU PVSEC

DOI: 10.4229/eupvsec20162016-2bv.7.53

Authors: Kuo, C.-W., Kuan, T.-M., Wu, L.-G., Huang, C.-C., Peng, H.-Y., Yu, C.-Y.

Language: English

Topic: Silicon and Solar Cell Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDGs: Affordable and clean energy, Industry, innovation and infrastructure

Open Access status: green

OpenAlex ID: W2762443046

FWCI:

Cites:

Cited by: 1

Related to: 10