Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Year: 2017

Type: article

Abstract: Ultrawide‐bandgap (UWBG) semiconductors, with bandgaps significantly wider than the 3.4 eV of GaN, represent an exciting and challenging new area of research in semiconductor materials, physics, devices, and applications. Because many figures‐of‐merit for device performance scale nonlinearly with bandgap, these semiconductors have long been known to have compelling potential advantages over their narrower‐bandgap cousins in high‐power and RF electronics, as well as in deep‐UV optoelectronics, quantum information, and extreme‐environment applications. Only recently, however, have the UWBG semiconductor materials, such as high Al‐content AlGaN, diamond and Ga 2 O 3 , advanced in maturity to the point where realizing some of their tantalizing advantages is a relatively near‐term possibility. In this article, the materials, physics, device and application research opportunities and challenges for advancing their state of the art are surveyed.

Source: Advanced Electronic Materials

DOI: 10.1002/aelm.201600501

Institutions: Sandia National Laboratories, University of California, Davis, MIT Lincoln Laboratory, Massachusetts Institute of Technology, Cornell University, Palo Alto Research Center, DEVCOM Army Research Laboratory, United States Army, The Ohio State University, University of California, Santa Barbara, Boston University, North Carolina State University, Purdue University West Lafayette, Purdue University System, Kyma Technologies (United States), Georgia Institute of Technology, Michigan State University, United States Air Force Research Laboratory, Wright-Patterson Air Force Base, U.S. Air Force Research Laboratory Materials and Manufacturing Directorate, National Institute of Information and Communications Technology, University of South Carolina, United States Naval Research Laboratory, Naval Research Laboratory Electronics Science and Technology Division, Arizona State University, University of Illinois Urbana-Champaign, Vanderbilt University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $3,560

Funders: National Science Foundation, U.S. Department of Energy, Vanderbilt University, Georgia Institute of Technology, Massachusetts Institute of Technology, Ohio State University, Arizona State University, Auburn University, North Carolina State University, Michigan State University, Johns Hopkins University, Case Western Reserve University, Lehigh University, University of South Carolina, Iran Telecommunication Research Center, Defense Advanced Research Projects Agency, University of Illinois at Urbana-Champaign, Advanced Research Projects Agency - Energy, Office of Energy Efficiency and Renewable Energy, National Nuclear Security Administration, College of Engineering, Michigan State University, University of California, Santa Barbara, University of California, Los Angeles, University of California, Davis, Advanced Research Projects Agency, National Institute of Information and Communications Technology, Office of Naval Research, Division of Materials Research, Division of Electrical, Communications and Cyber Systems, Air Force Office of Scientific Research, Army Research Office, Lawrence Livermore National Laboratory, Sandia National Laboratories, Army Research Laboratory

OpenAlex ID: W2772829183