Work

Enhanced breakdown voltage for all-SiC modules

Year: 2017

Type: conference-paper

Source: IEEE CPMT Symposium Japan (ICSJ)

DOI: 10.1109/icsj.2017.8240105

Authors: Motohito Hori, Yuichiro Hinata, Katsumi Taniguchi, Yoshinari Ikeda, Yoshikazu Takahashi

Institution: Fuji Electric (Japan)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W2777048608

FWCI: 1.55

Cites: 2

Cited by: 5

Related to: 10