Work

Buffer trapping effects on knee walkout in GaN HEMTs

Year: 2017

Type: conference-paper

Source: IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS)

DOI: 10.1109/comcas.2017.8244823

Authors: B. Ubochi, K. Ahmeda, K. Kalna

Institution: Swansea University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2783246770

FWCI:

Cites: 14

Cited by:

Related to: 10