Work

94% power-recycle and near-zero driving-dead-zone N-type low-dropout regulator with 20mV undershoot at short-period load transient of flash memory in smart phone

Year: 2018
Type: conference-paper
Authors: Wei-Chung Chen, Tzu-Chi Huang, Chao-Chang Chiu, Chih-Wei Chang, Kuo-Chun Hsu
Institution: MediaTek (Taiwan)
Language: English
Open Access status: closed
OpenAlex ID: W2792771663
FWCI: 0.801
Cites: 5
Cited by: 10
Related to: 10