Work

Photoelectron scattering in a p-GaN(Cs,O) photocathode

Year: 2018

Type: conference-paper

Abstract: Photoelectron scattering in a p -GaN(Cs,O) photocathode was studied by photoelectron emission spectroscopy at low temperatures. It has been experimentally established that the transfer of photoelectrons from the bulk of a p -GaN(Cs,O) photocathode to vacuum is accompanied by the emission of a cascade of optical phonons in the bulk and at the GaN–vacuum interface. Based on how the high-energy features of the photoelectron energy distribution shift with the photon energy, we find m hh / m 0 = 2.3 ± 0.3.

Source: Journal of Physics Conference Series

DOI: 10.1088/1742-6596/993/1/012027

Authors: S A Rozhkov, V V Bakin, S N Kosolobov, H E Scheibler, A S Terekhov

Institutions: Novosibirsk State University, Siberian Branch of the Russian Academy of Sciences, Institute of Semiconductor Physics

Language: English

Topic: Photocathodes and Microchannel Plates

Subfield: Instrumentation

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: diamond

Funders: Russian Foundation for Basic Research, Ioffe Institute, Russian Academy of Sciences

OpenAlex ID: W2797828643

FWCI: 0.493

Cites: 17

Cited by: 2

Related to: 10