Work

Atomistic modeling trap-assisted tunneling in hole tunnel field effect transistors

Year: 2018

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.5018737

Authors: Pengyu Long, Jun Z. Huang, Michael Povolotskyi, Prasad Sarangapani, Gustavo A. Valencia-Zapata, Tillmann Kubis, Mark J. W. Rodwell, Gerhard Klimeck

Institutions: Purdue University West Lafayette, University of California, Santa Barbara

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Science Foundation, Semiconductor Research Corporation

Awards: G1057098149, Accelerating Nano-scale Transistor Innovation though Petascale Simulation, E2CDA: Type I: Collaborative Research: A Fast 70mV Transistor Technology for Ultra-Low-Energy Computing, Collaborative Research: nm Electron Wave Devices for Low-Power VLSI Electronics

OpenAlex ID: W2801426334

FWCI: 0.476

Cites: 33

Cited by: 8

Related to: 10