Work

Detection of edge component of threading dislocations in GaN by Raman spectroscopy

Year: 2018

Type: article

Abstract: We succeeded in measuring the density and direction of the edge component of threading dislocations (TDs) in c -plane (0001) GaN by micro-Raman spectroscopy mapping. In the micro-Raman spectroscopy mapping of the E 2 H peak shift between 567.85 and 567.75 cm −1 , six different contrast images are observed toward directions of . By comparing X-ray topography and etch pit images, the E 2 H peak shift is observed where the edge component of TDs exists. In contrast, the E 2 H peak is not observed where the screw component of TDs exists.

Source: Applied Physics Express

DOI: 10.7567/apex.11.061002

Authors: Nobuhiko Kokubo, Yosuke Tsunooka, Fumihiro Fujie, Junji Ohara, Kazukuni Hara, Shoichi Onda, Hisashi Yamada, Mitsuaki Shimizu, Shunta Harada, Miho Tagawa, Toru Ujihara

Institutions: Nagoya University, National Institute of Advanced Industrial Science and Technology, Institute of Materials and Systems for Sustainability, Nagoya University, Denso (Japan)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W2803348366

FWCI: 1.363

Cites: 30

Cited by: 30

Related to: 10