Work

Dopant Recovery in Epitaxial Ge on SOI by Laser Annealing With Device Applications

Year: 2018

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2018.2834382

Authors: Fang-Liang Lu, Chung-En Tsai, I-Hsieh Wong, Chun-Ti Lu, C. W. Liu

Institution: National Taiwan University

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Ministry of Science and Technology, Taiwan

Awards: G5914744652, ( V ), Energy Efficient Ncfet and Fefet Memory Technologies

OpenAlex ID: W2804153863

FWCI: 0.289

Cites: 32

Cited by: 4

Related to: 10