Work

Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs

Year: 2018

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.5027822

Authors: Z. H. Zaidi, K. B. Lee, J. W. Roberts, I. Guiney, H. Qian, S. Jiang, J. S. Cheong, P. Li, D. J. Wallis, C. J. Humphreys, P. R. Chalker, P. A. Houston

Institutions: University of Sheffield, University of Liverpool, University of Cambridge, Cardiff University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Engineering and Physical Sciences Research Council

Awards: G2966428326, Silicon Compatible GaN Power Electronics, EPSRC Manufacturing Fellowship in Gallium Nitride

OpenAlex ID: W2804672769

FWCI: 0.419

Cites: 36

Cited by: 11

Related to: 10