Work

Low-Dispersion, High-Voltage, Low-Leakage GaN HEMTs on Native GaN Substrates

Year: 2018

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2018.2832250

Authors: Muhammad Alshahed, Lars Heuken, Mohammed Alomari, Ildiko Cora, Lajos Toth, Bela Pecz, Clemens Wachter, Thomas Bergunde, Joachim N. Burghartz

Institutions: Institut für Mikroelektronik Stuttgart, Institute for Technical Physics and Materials Science, HUN-REN Centre for Energy Research, Hungarian Academy of Sciences, Azur Space Solar Power

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2804679804

FWCI: 2.217

Cites: 31

Cited by: 52

Related to: 10