Year: 2018
Type: article
Abstract: We propose a new method for growing semipolar GaN films on a Si(100) substrate with an array of sub-100-nm-sized V-grooves formed on the surface. It is shown that, using such a nanostructured substrate for metalorganic hydride vapor-phase epitaxy, it is possible to obtain GaN (101̅1̇) epilayers deviating by an angle of about 62° from the polar direction and having an X-ray rocking curve with a minimum FWHM value of ω_θ ~ 60 arcmin.
Institution: Ioffe Institute
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: diamond
OpenAlex ID: W2804679913