Work

Integrating AlInN interlayers into InGaN/GaN multiple quantum wells for enhanced green emission

Year: 2018

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.5028257

Authors: Wei Sun, Syed Ahmed Al Muyeed, Renbo Song, Jonathan J. Wierer, Nelson Tansu

Institution: Lehigh University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Science Foundation

Awards: Valence Subband Engineering in High Al-content AlGaN Quantum Wells Active Regions for Deep Ultraviolet Lasers and Emitters, Physics, Materials, and Electronic Properties of Dilute-As GaNAs Semiconductors

OpenAlex ID: W2804732913

FWCI: 2.534

Cites: 44

Cited by: 31

Related to: 10