Chemical vapor deposition graphene of high mobility by gradient growth method on an 4H-SiC (0 0 0 1) substrate
Year: 2018
Type: article
Source: Applied Surface Science
Institution: Hebei Semiconductor Research Institute
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
Awards: G3032239608, G6478392908
OpenAlex ID: W2804745708
