Work

Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy

Year: 2018

Type: article

Abstract: We present direct experimental evidence of Anderson localization induced by the intrinsic alloy compositional disorder of InGaN/GaN quantum wells. Our approach relies on the measurement of the luminescence spectrum under local injection of electrons from a scanning tunneling microscope tip into a near-surface single quantum well. Fluctuations in the emission line shape are observed on a few-nanometer scale. Narrow emission peaks characteristic of single localized states are resolved. Calculations in the framework of the localization landscape theory provide the effective confining potential map stemming from composition fluctuations. This theory explains well the observed nanometer scale carrier localization and the energies of these Anderson-type localized states. The energy spreading of the emission from localized states is consistent with the usually observed very broad photo- or electroluminescence spectra of InGaN/GaN quantum well structures.

Source: Physical review. B./Physical review. B

DOI: 10.1103/physrevb.98.045305

Authors: W. Hahn, J.-M. Lentali, P. Polovodov, N. Young, S. Nakamura, J. S. Speck, C. Weisbuch, M. Filoche, Y.-R. Wu, M. Piccardo, F. Maroun, L. Martinelli, Y. Lassailly, J. Peretti

Institutions: Centre National de la Recherche Scientifique, École Polytechnique, TU Dortmund University, Université Paris-Saclay, Laboratoire de Physique de la Matière Condensée, University of California, Santa Barbara, National Taiwan University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: hybrid

Funders: U.S. Department of Energy, Agence Nationale de la Recherche, King Abdullah University of Science and Technology, Ministry of Science and Technology, Taiwan, King Abdulaziz City for Science and Technology, Advanced Research Projects Agency - Energy, University of California, Santa Barbara, Advanced Research Projects Agency

Awards: IDENTIFICATION AND MITIGATION OF DROOP MECHANISM IN GALLIUM NITRIDE (GAN)-BASED LIGHT EMITTING DIODES (LEDS), Electronic localization effects in nitride heterostructures and devices, Theory and Modeling of Critical Processes in Nitrides Semiconductors Light Emitting Diodes (Acronym: Criproni), G4290134093, Theory and modeling of critical processes in nitrides semiconductors Light Emitting Diodes, Development of Multi-Dimensional Modeling Programs for Analyzing Carrier Transport and Emission Characteristic on Algan Based Deep Uvleds and Laser Diodes

OpenAlex ID: W2804882986

FWCI: 2.534

Cites: 34

Cited by: 47

Related to: 10