Work

Concentric Hexagonal GaN Structures for Nanophotonics, Fabricated by Selective Vapor-Phase Epitaxy with Ion-Beam Etching

Year: 2018

Type: article

Source: Semiconductors

DOI: 10.1134/s1063782618070151

Authors: M. I. Mitrofanov, I. V. Levitskii, G. V. Voznyuk, E. E. Tatarinov, S. N. Rodin, M. A. Kaliteevski, V. P. Evtikhiev

Institutions: Russian Academy of Sciences, Ioffe Institute, ITMO University, Saint Petersburg Academic University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2805487658

FWCI: 0.105

Cites: 15

Cited by: 2

Related to: 10