Work

Improved Dynamic R ON of GaN Vertical Trench MOSFETs (OG-FETs) Using TMAH Wet Etch

Year: 2018

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2018.2843335

Authors: Dong Ji, Wenwen Li, Anchal Agarwal, Silvia H. Chan, Jeffrey Haller, Davide Bisi, Michelle Labrecque, Chirag Gupta, Bill Cruse, Rakesh Lal, Stacia Keller, Umesh K. Mishra, Srabanti Chowdhury

Institutions: University of California, Davis, University of California, Santa Barbara, Transphorm (United States)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Advanced Research Projects Agency - Energy, Advanced Research Projects Agency

OpenAlex ID: W2805620933

FWCI: 1.258

Cites: 20

Cited by: 45

Related to: 10