Work

Band bending near grain boundaries of Cu2ZnSn(S,Se)4 thin films and its effect on photovoltaic performance

Year: 2018

Type: article

Source: Nano Energy

DOI: 10.1016/j.nanoen.2018.06.032

Authors: Yaping Ma, Wenjie Li, Ye Feng, Zhaohui Li, Xuhang Ma, Xiaoru Liu, Xuefeng Wu, Yi Zhang, Chunlei Yang, Xinhui Lu, Kedong Wang, Xudong Xiao

Institutions: Chinese University of Hong Kong, Chinese Academy of Sciences, Shenzhen Institutes of Advanced Technology, Southern University of Science and Technology, Nankai University

Language: English

Topic: Chalcogenide Semiconductor Thin Films

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: 具有黄铜矿结构的高效超薄铜基化合物薄膜太阳电池研究, G8406503096

OpenAlex ID: W2805680407

FWCI: 1.978

Cites: 44

Cited by: 34

Related to: 10