Work

Operation of 1.2-kV 4H-SiC Accumulation and Inversion Channel Split-Gate (SG) MOSFETs at Elevated Temperatures

Year: 2018

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2018.2841940

Authors: Kijeong Han, B. J. Baliga

Institutions: North Carolina State University, PowerAmerica

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Office of Energy Efficiency and Renewable Energy

Award: G2910019631

OpenAlex ID: W2806493995

FWCI: 0.666

Cites: 16

Cited by: 16

Related to: 10