Work

64‐4: Manufacturing and Encapsulation Process of Bottom Gate Bottom Contact Thin‐Film Transistors with a Printed Oxide Semiconductor

Year: 2018

Type: conference-paper

Source: SID Symposium Digest of Technical Papers

DOI: 10.1002/sdtp.12255

Authors: Nesrine Kammoun, Yvonne Krieg, Guy Williams Ngaleu, Ralf Anselmann, Gerhard Renner, Norbert Fruehauf

Institutions: University of Stuttgart, Evonik (Germany)

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2806907038

FWCI:

Cites: 6

Cited by: 1

Related to: 10