Demonstration of β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors
Year: 2018
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.5037095
Language: English
Topic: Ga2O3 and related materials
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
Funder: Defense Threat Reduction Agency
Award: G3228853530
OpenAlex ID: W2807449591