Work

Magnetic Field Sensing with 4H SiC Diodes: N vs P Implantation

Year: 2018

Type: article

Abstract: We explore the magnetic sensing capabilities of two 4H-SiC n+p diodes fabricated by NASA Glenn which only differ in the implanted ion species, nitrogen and phosphorus, and the implant activation annealing time. We use low-and high-field electrically detected magnetic resonance (EDMR) to investigate the defect structure used to sense magnetic fields as well as to evaluate the sensitivity. In addition, we expose these devices to high energy electron radiation to evaluate the defect sensing capability in a harsh radiation environment. The results from this work will allow us to tailor our processing methods to design a more optimal 4H-SiC pn diode for magnetic field sensing in harsh environments.

Source: Materials science forum

DOI: 10.4028/www.scientific.net/msf.924.988

Authors: Corey J. Cochrane, Hannes Kraus, Philip G. Neudeck, David J. Spry, Ryan J. Waskiewicz, James Ashton, Patrick M. Lenahan

Institutions: California Institute of Technology, Glenn Research Center, Pennsylvania State University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Funder: Jet Propulsion Laboratory

OpenAlex ID: W2808065093

FWCI: 0.191

Cites: 15

Cited by: 5

Related to: 10