Comparative study of the growth characteristics and electrical properties of atomic-layer-deposited HfO 2 films obtained from metal halide and amide precursors
Year: 2018
Type: article
Source: Journal of Materials Chemistry C
DOI: 10.1039/c8tc01476k
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2809782173
