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Comparative study of the growth characteristics and electrical properties of atomic-layer-deposited HfO 2 films obtained from metal halide and amide precursors

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Year: 2018
Type: article
Source: Journal of Materials Chemistry C
DOI: 10.1039/c8tc01476k
Authors: Il-Kwon Oh, Bo-Eun Park, Seunggi Seo, Byung Chul Yeo, Jukka Tanskanen, Han-Bo-Ram Lee, Woo-Hee Kim, Hyungjun Kim
Institutions: Yonsei University, Korean Association Of Science and Technology Studies, Korea Institute of Science and Technology, University of Eastern Finland, Incheon National University, Jeonbuk National University
Language: English

Topic: Semiconductor materials and devices
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences

Open Access status: closed

Funders: Chonbuk National University, Yonsei University, Ministry of Trade, Industry and Energy, National Research Foundation of Korea, Ministry of Science ICT and Future Planning, Korea Evaluation Institute of Industrial Technology
Awards: G131919595, G3040881300, G5996488103, G862588566, G8640816397
OpenAlex ID: W2809782173
FWCI: 1.818
Cites: 75
Cited by: 56
Related to: 10
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