Work

Immobilization Phenomenon of Partials Surrounding Double Shockley Stacking Faults in Heavily Nitrogen Doped 4H-SiC Crystal with Thermal Anneal

Year: 2018

Type: article

Abstract: The expansion behavior of double Shockley stacking faults (DSFs) was investigated in heavily nitrogen doped 4H-SiC crystals at high temperatures up to 1350°C. An immobilization phenomenon of partials surrounding DSFs was discovered by a thermal annealing at temperatures over 1275°C. The electric properties of SiC crystal were maintained after the partial dislocations were immobilized with a high temperature annealing. The mobile partial dislocations extended straight, but the immobile ones bent toward the glide direction. This immobilization phenomenon is significant and useful for achieving low-resistance SiC substrates without DSFs.

Source: Materials science forum

DOI: 10.4028/www.scientific.net/msf.924.160

Authors: Naohiro Sugiyama, Hiromasa Suo, Kazuma Eto, Yuichiro Tokuda, Isaho Kamata, Norihiro Hoshino, Tomohisa Kato, Hidekazu Tsuchida, Hajime Okumura

Institutions: Denso (Japan), National Institute of Advanced Industrial Science and Technology, Central Research Institute of Electric Power Industry

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

OpenAlex ID: W2809848347

FWCI: 0.191

Cites: 7

Cited by: 2

Related to: 10