Work

A 26 GHz Doherty power amplifier and a fully integrated 2×2 PA in 0.15μm GaN HEMT process for heterogeneous integration and 5G

Year: 2018

Type: conference-paper

Source: IEEE MTT-S International Wireless Symposium (IWS)

DOI: 10.1109/ieee-iws.2018.8401017

Authors: Runnan Guo, Hongqi Tao, Bin Zhang

Institution: The 28th Research Institute of China Electronics Technology Group Corporation

Language: English

Topic: Advanced Power Amplifier Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W2810696062

FWCI: 1.994

Cites: 6

Cited by: 23

Related to: 10