Work

The effects of high-energy ion irradiations on the I–V characteristics of silicon NPN transistors

Year: 2018

Type: article

Source: Radiation effects and defects in solids

DOI: 10.1080/10420150.2018.1499735

Authors: A. P. Gnana Prakash, M. N. Bharathi, Vinayakprasanna N. Hegde, T. M. Pradeep, N. Pushpa, Ambuj Tripathi

Institutions: University of Mysore, Inter-University Accelerator Centre

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Inter-University Accelerator Centre

OpenAlex ID: W2883202075

FWCI: 0.096

Cites: 16

Cited by: 1

Related to: 10