Work

Semipolar GaN Layers Grown on Nanostructured Si(100) Substrate

Year: 2018

Type: article

Source: Technical Physics Letters

DOI: 10.1134/s1063785018060172

Authors: V. N. Bessolov, E. V. Konenkova, T. A. Orlova, S. N. Rodin, M. P. Shcheglov, D. S. Kibalov, V. K. Smirnov

Institutions: Russian Academy of Sciences, Ioffe Institute

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2884595620

FWCI: 0.739

Cites: 15

Cited by: 9

Related to: 10