Towards a fast determination of the hydrogen concentration in thin passivating a-Si:H layers using GD-OES
Year: 2018
Type: conference-paper
Abstract: In this contribution, the measurement of the hydrogen concentration in thin passivating amorphous silicon (a-Si:H) layers using Glow Discharge Optical Emission Spectroscopy (GD-OES) is suggested. Usually GD-OES hydrogen measurements suffer from additional signals from atmospheric contaminations, especially from H2O desorbed on the surfaces of such thin layers. This issue is addressed by the deposition of a hydrogen-free copper buffer layer on top, which provides a delay between sputtering the sample surface and the a-Si:H layer itself. Thus the signals from the atmospheric contaminations and from the a-Si:H layer itself are separated. The contamination-free hydrogen signals of the thin a-Si:H layers are eventually calibrated to average hydrogen concentrations.
Source: AIP conference proceedings
DOI: 10.1063/1.5049260
Authors: Jonathan Linke, Giso Hahn, Barbara Terheiden
Institution: University of Konstanz
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2885877154