Work

Variation Caused by Spatial Distribution of Dielectric and Ferroelectric Grains in a Negative Capacitance Field-Effect Transistor

Year: 2018

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2018.2864971

Authors: Ming-Yen Kao, Angada B. Sachid, Yen-Kai Lin, Yu-Hung Liao, Harshit Agarwal, Pragya Kushwaha, Juan Pablo Duarte, Huan-Lin Chang, Sayeef Salahuddin, Chenming Hu

Institution: University of California, Berkeley

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: University of California Berkeley

OpenAlex ID: W2888922166

FWCI: 1.148

Cites: 23

Cited by: 37

Related to: 10