Work

An Analytical Modeling of Drain Current for Single Material Surrounded Gate Nanoscale SOI MOSFET

Year: 2018

Type: article

Abstract: In this paper, we have presented modeling of drain current for single material surrounded gate SOI MOSFET (SMG SGT SOI MOSFET) whose channel length is 40nm. We have studied the behavior of device by varying various device parameters in Linear, Saturation, and Sub-threshold regions. We have also presented a drain current model incorporating DIBL. The comparison between previously presented model with channel length = 50 nm and our scaled model is also presented in various regions of device operation.

Source: Journal of Nano- and Electronic Physics

DOI: 10.21272/jnep.10(4).04012

Authors: Arjimand Ashraf, Prashant Mani

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: diamond

OpenAlex ID: W2889453070

FWCI: 0.191

Cites:

Cited by: 3

Related to: 10