Work

First Demonstration of 0.27-Ω 600-V/10-A GaN-on-Si Power MIS-HEMTs in a 200-mm Hybrid CMOS-/Au-Compatible Process Line

Year: 2015

Type: article

Authors: Yuan Li, Xia Xiao, Longjuan Tang, LI Hua-hua, Yuanqi Jiang, Kevin J. Chen, A. Yen

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

OpenAlex ID: W2895485367

FWCI:

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Related to: 10