Work

Thermoelectric properties of epitaxial Ge thin films on Si(001) with strong crystallinity dependence

Year: 2018

Type: article

Abstract: The thermoelectric properties of epitaxial Ge films on Si(001) substrates were investigated, where the film crystallinity was controlled using various growth techniques established in large-scale integration research. The films exhibited substantially lower thermal conductivities than that of bulk Ge. Unlike carrier mobility with strong crystallinity dependence, the Seebeck coefficient was similar to the high bulk value and exhibited less crystallinity dependence. This demonstrates that inherently high-carrier-mobility Ge films with high crystallinity can exhibit reduced thermal conductivity and a high thermoelectric power factor simultaneously, leading to the realization of thermoelectric films on Si for reusing low-temperature waste heat from Si-based electronic devices.

Source: Applied Physics Express

DOI: 10.7567/apex.11.111301

Authors: Tatsuhiko Taniguchi, Takafumi Ishibe, Hiroki Miyamoto, Yuichiro Yamashita, Yoshiaki Nakamura

Institutions: The University of Osaka, National Institute of Advanced Industrial Science and Technology

Language: English

Topic: Advanced Thermoelectric Materials and Devices

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: bronze

Funders: Ministry of Education, Culture, Sports, Science and Technology, Japan Society for the Promotion of Science, Japan Science and Technology Agency, Core Research for Evolutional Science and Technology