Work

Bandgap bowing in crystalline (ZnO) 1− x (GaN) x thin films; influence of composition and structural properties

Year: 2018

Type: article

Source: Semiconductor Science and Technology

DOI: 10.1088/1361-6641/aaee4a

Authors: V S Olsen, C Bazioti, A Azarov, B G Svensson, A Kuznetsov, Ø Prytz, L Vines

Institution: University of Oslo

Language: English

Topic: ZnO doping and properties

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: Norges Forskningsråd

Awards: G2973624523, G3161193914, G3537996495, G3934138050

OpenAlex ID: W2899857771

FWCI: 0.528

Cites: 23

Cited by: 7

Related to: 10