Work

High resistivity halide vapor phase homoepitaxial β-Ga2O3 films co-doped by silicon and nitrogen

Year: 2018

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.5045601

Authors: Marko J. Tadjer, Andrew D. Koehler, Jaime A. Freitas, James C. Gallagher, Matty C. Specht, Evan R. Glaser, Karl D. Hobart, Travis J. Anderson, Fritz J. Kub, Quang T. Thieu, Kohei Sasaki, Daiki Wakimoto, Ken Goto, Shinya Watanabe, Akito Kuramata

Institutions: United States Naval Research Laboratory, American Society For Engineering Education, Novel Crystal Technology, Inc. (Japan), Tamura Corporation (Japan)

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: Office of Naval Research Global

Award: G3924666

OpenAlex ID: W2900305142

FWCI: 1.931

Cites: 36

Cited by: 37

Related to: 10