Work

Three Stage 5-18.5 GHz High Gain and High Power Amplifier Based on 0.15 μm GaN Technology

Year: 2018

Type: conference-paper

Source: European Microwave Integrated Circuits Conference

DOI: 10.23919/eumic.2018.8539866

Authors: M. Dinari, G. Mouginot, E. Byk, V. Brunel, C. Chang, L. Brunel, M. Camiade

Institution: United Monolithic Semiconductor (France)

Language: English

Topic: Advanced Power Amplifier Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2901646993

FWCI: 0.4

Cites: 9

Cited by: 2

Related to: 10