Work

Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition

Year: 2018

Type: article

Source: Materials Letters

DOI: 10.1016/j.matlet.2018.11.012

Authors: Fengfeng Shi, Jun Han, Yanhui Xing, Junshuai Li, Li Zhang, Tao He, Tao Li, Xuguang Deng, Xiaodong Zhang, Baoshun Zhang

Institutions: Chinese Academy of Sciences, Beijing University of Technology, Suzhou Institute of Nano-tech and Nano-bionics, Nanjing University of Science and Technology

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Beijing Municipal Commission of Education, Natural Science Foundation of Beijing Municipality

Awards: 用于海洋的数字相控阵可重配置电路与系统研究, G3052668509, G587998826, G8071064090, G8682459904

OpenAlex ID: W2901698679

FWCI: 1.389

Cites: 13

Cited by: 45

Related to: 10