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Metal Oxide Semiconductors: Solution‐Processed Rad‐Hard Amorphous Metal‐Oxide Thin‐Film Transistors (Adv. Funct. Mater. 47/2018)

Year: 2018

Type: article

Abstract: In article number 1802717, Choongik Kim, Myung-Gil Kim, and co-workers describe rad-hard solution-processed metal-oxide semiconductors by investigating the effect of high-energy proton irradiation. Although the oxygen vacancy generation from proton irradiation typically results in device performance degradation, a structurally flexible a-ZTO based device with an organic passivation layer exhibits stable electrical performance for irradiation up to 1015 cm−2 doses.

Source: Advanced Functional Materials

DOI: 10.1002/adfm.201870333

Authors: Byungkyu Park, Dongil Ho, Guhyun Kwon, Dojeon Kim, Sung Yong Seo, Choongik Kim, Myung‐Gil Kim

Institutions: Sogang University, Chung-Ang University, Pukyong National University

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W2901809477

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