Year: 2018
Type: article
Abstract: Grain boundaries in Sr-doped LaMnO3±δ thin films have been shown to strongly influence the electronic and oxygen mass transport properties, being able to profoundly modify the nature of the material. The unique behavior of the grain boundaries can be correlated with substantial modifications of the cation concentration at the interfaces, which can be tuned by changing the overall cationic ratio in the films. In this work, we study the electronic properties of La0.8Sr0.2Mn1−yO3±δ thin films with variable Mn content. The influence of the cationic composition on the grain boundary and grain bulk electronic properties is elucidated by studying the manganese valence state evolution using spectroscopy techniques and by confronting the electronic properties of epitaxial and polycrystalline films. Substantial differences in the electronic conduction mechanism are found in the presence of grain boundaries and depending on the manganese content. Moreover, the unique defect chemistry of the nanomaterial is elucidated by measuring the electrical resistance of the thin films as a function of oxygen partial pressure, disclosing the importance of the cationic local non-stoichiometry on the thin film behavior.
Source: APL Materials
DOI: 10.1063/1.5054576
Institutions: Institut de Recerca en Energia de Catalunya, Institut polytechnique de Grenoble, Centre National de la Recherche Scientifique, Laboratoire des Matériaux et du Génie Physique, Université Grenoble Alpes, European Synchrotron Radiation Facility, Institució Catalana de Recerca i Estudis Avançats
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,200
OpenAlex ID: W2904761623