Work

High speed near-infrared range sensor based on InP/InGaAs heterostructures

Year: 2018

Type: conference-paper

Abstract: Technology of creation effective photocathode based on the InP/InGaAs heterostructures is given. The results of an experimental study of pin-diode, which was used as the receiver of photoelectrons, are presented. Arrangement of the vacuum photoelectronic device with InP/InGaAs photocathode is proposed.

Source: Journal of Physics Conference Series

DOI: 10.1088/1742-6596/1124/2/022014

Authors: K J Smirnov, V V Davydov, S F Glagolev, G V Tushavin

Institutions: Saint-Petersburg State University of Telecommunications, Joint Stock Company National Research Institute Electron, Peter the Great St. Petersburg Polytechnic University, ITMO University

Language: English

Topic: Photocathodes and Microchannel Plates

Subfield: Instrumentation

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: diamond

OpenAlex ID: W2906166311

FWCI: 10.81

Cites: 3

Cited by: 31

Related to: 10