Work

Data retention investigation in Al:HfO2-based resistive random access memory arrays by using high-temperature accelerated tests

Year: 2019

Type: article

Abstract: In this work, the feasibility of using accelerated tests at high temperatures to assess the data retention on resistive random access memory devices was evaluated on Al:HfO2-based 1-transistor-1-resistor 4 kbit arrays. By annealing the samples at four different temperatures (190, 210, 230, and 260°C) for 10 h, different distributions of retention failure times were obtained and modeled by using Weibull distributions. Based on the temperature dependency of these distributions, the Arrhenius activation energy of the degradation process was calculated (1.09 eV). In addition, the maximum temperature that guarantees a retention time to failure of a 10 year lifetime was extrapolated (105°C).

Source: Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

DOI: 10.1116/1.5054983

Authors: Eduardo Perez, Mamathamba K. Mahadevaiah, Cristian Zambelli, Piero Olivo, Christian Wenger

Institutions: Leibniz Institute for High Performance Microelectronics, University of Ferrara, Medizinische Hochschule Brandenburg Theodor Fontane

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

Funder: Deutsche Forschungsgemeinschaft

Award: G2046555355