Work

Hafnium silicate gate dielectrics in GaN metal oxide semiconductor capacitors

Year: 2019

Type: article

Abstract: Characteristics of hafnium silicate as gate dielectric in n-GaN capacitors were investigated. The Hf 0.57 Si 0.43 O x , Hf 0.64 Si 0.36 O x and HfO 2 films exhibited high dielectric constants of 15.4, 15.9, and 17.6, respectively. The Hf 0.57 Si 0.43 O x and Hf 0.64 Si 0.36 O x films, which had an amorphous structure, showed superior properties, including a minimal flatband voltage ( V fb ) hysteresis (≤70 mV) and a small V fb shift (≤ − 0.45 V), as well as a low interface state density (~ 4 × 10 11 cm −2 eV −1 at −0.4 eV from conduction band), and a high breakdown electric field (≥8.6 MV cm −1 ) compared to those of a polycrystalline HfO 2 film.

Source: Applied Physics Express

DOI: 10.7567/1882-0786/aaf62a

Authors: Toshihide Nabatame, Erika Maeda, Mari Inoue, Kazuya Yuge, Masafumi Hirose, Koji Shiozaki, Naoki Ikeda, Tomoji Ohishi, Akihiko Ohi

Institutions: National Institute for Materials Science, Shibaura Institute of Technology, Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

Funders: Ministry of Education, Culture, Sports, Science and Technology, Hokkaido University, National Institute for Materials Science, Joining and Welding Research Institute, Osaka University

OpenAlex ID: W2907186160

FWCI: 1.535

Cites: 34

Cited by: 41

Related to: 10