Work

Monolithic integration of enhancement/depletion-mode high electron mobility transistors using hydrogen plasma treatment

Year: 2019

Type: article

Source: Applied Physics Express

DOI: 10.7567/1882-0786/aafcd5

Authors: Ronghui Hao, Chi Sun, Bin Fang, Ning Xu, Zhifu Tao, Hui Zhang, Xing Wei, Wenkui Lin, Xiaodong Zhang, Guohao Yu, Zhongming Zeng, Yong Cai, Xinping Zhang, Baoshun Zhang

Institutions: Chinese Academy of Sciences, Nanjing University of Science and Technology, Suzhou Institute of Nano-tech and Nano-bionics, Hangzhou Dianzi University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Natural Science Foundation of Jiangsu Province

Awards: G1627209275, G6829686805, G8092891663

OpenAlex ID: W2909337604

FWCI: 0.788

Cites: 25

Cited by: 16

Related to: 10