Work

Electro-thermal modeling for InxGa1-xN/GaN based quantum well heterostructures

Year: 2019

Type: article

Source: Materials Science in Semiconductor Processing

DOI: 10.1016/j.mssp.2019.01.011

Authors: Mohamed Hichem Gazzah, Bilel Chouchen, Abdelaali Fargi, Hafedh Belmabrouk

Institutions: University of Monastir, Majmaah University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2910072596

FWCI: 2.026

Cites: 38

Cited by: 23

Related to: 10