Morphological and Optoelectrical Characterization of Silicon Nanostructures for Photovoltaic Applications
Year: 2019
Type: article
Abstract: Metal (silver)-Assisted Chemical Etching (MACE) method is used to fabricate silicon nanostructures like silicon nanowires (SiNWs) and silicon nanocones (SiNCs). The morphological characterization of fabricatedSiNWs has shown that 5 minutes is the optimal time of silver deposition on silicon substrate.Silicon nanocones (SiNCs) were also fabricated by etching vertical SiNWs with a AgN O 3 /HF/H 2 O 2 solution.The optical and electrical properties of SiNWs and SiNCs are analyzed and compared with those of the bulk silicon.The fabricated SiNWs (SiNCs) reduce the surface reflectance and the sheet resistance down to 6% (3%) and 9.143 Ω/sq (6.997 Ω/sq) respectively.
DOI: 10.25046/aj040106
Institutions: Université Gaston Berger, Ziguinchor University
Language: English
Field: Materials Science
Domain: Physical Sciences
Open Access status: diamond
OpenAlex ID: W2913230613
