Optical properties of GaN nanowires grown on chemical vapor deposited-graphene
Year: 2019
Type: article
Abstract: Optical properties of GaN nanowires (NWs) grown on chemical vapor deposited-graphene transferred on an amorphous support are reported. The growth temperature was optimized to achieve a high NW density with a perfect selectivity with respect to a SiO 2 surface. The growth temperature window was found to be rather narrow (815°C ± 5°C). Steady-state and time-resolved photoluminescence from GaN NWs grown on graphene was compared with the results for GaN NWs grown on conventional substrates within the same molecular beam epitaxy reactor showing a comparable optical quality for different substrates. Growth at temperatures above 820 °C led to a strong NW density reduction accompanied with a diameter narrowing. This morphology change leads to a spectral blueshift of the donor-bound exciton emission line due to either surface stress or dielectric confinement. Graphene multi-layered micro-domains were explored as a way to arrange GaN NWs in a hollow hexagonal pattern. The NWs grown on these domains show a luminescence spectral linewidth as low as 0.28 meV (close to the set-up resolution limit).
Source: Nanotechnology
Institutions: Centre National de la Recherche Scientifique, Université Paris-Saclay, Centre de Nanosciences et de Nanotechnologies, Paul Drude Institute for Solid State Electronics, Forschungsverbund Berlin, Korea Advanced Institute of Science and Technology, Sorbonne Université, Laboratoire d'Électronique et d'Electromagnétisme, Supélec, Laboratoire de Génie Électrique et Électronique de Paris, CentraleSupélec, ITMO University
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
Awards: Réseau national sur GaN, G6968794716
OpenAlex ID: W2913404704