Work

Coupled Ion‐Gel Channel‐Width Gating and Piezotronic Interface Gating in ZnO Nanowire Devices

Year: 2019

Type: article

Source: Advanced Functional Materials

DOI: 10.1002/adfm.201807837

Authors: Xixi Yang, Guofeng Hu, Guoyun Gao, Xuanyu Chen, Junlu Sun, Bensong Wan, Qian Zhang, Shanshan Qin, Wenliang Zhang, Caofeng Pan, Qijun Sun, Zhong Lin Wang

Institutions: Chinese Academy of Sciences, Beijing Institute of Nanoenergy and Nanosystems, National Center for Nanoscience and Technology, University of Chinese Academy of Sciences, Guangxi University, Georgia Institute of Technology

Language: English

Topic: ZnO doping and properties

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Chinese Academy of Sciences, Tianjin University, National Key Research and Development Program of China

Awards: G3513130568, G4813085109, G5153915828, G5472509171, G5584897916

OpenAlex ID: W2913490809

FWCI: 2.123

Cites: 47

Cited by: 39

Related to: 10