Work

Hetero-epitaxial growth of a GaN film by the combination of magnetron sputtering with Ar/Cl 2 gas mixtures and a separate supply of nitrogen precursors from a high density radical source

Year: 2019

Type: article

Source: Japanese Journal of Applied Physics

DOI: 10.7567/1347-4065/aaeb39

Authors: Atsushi Tanide, Shohei Nakamura, Akira Horikoshi, Shigeru Takatsuji, Motohiro Kohno, Kazuo Kinose, Soichi Nadahara, Masazumi Nishikawa, Akinori Ebe, Kenji Ishikawa, Masaru Hori

Institutions: SCREEN (Japan), Nagoya University, EMD Corporation (Japan)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2913890224

FWCI: 0.223

Cites: 38

Cited by: 4

Related to: 10