Work

Atomic layer etching of AlGaN using Cl2 and Ar gas chemistry and UV damage evaluation

Year: 2019

Type: article

Source: Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

DOI: 10.1116/1.5063795

Authors: Hiroyuki Fukumizu, Makoto Sekine, Masaru Hori, Koji Kanomaru, Takuo Kikuchi

Institutions: Toshiba (Japan), Nagoya University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2914519136

FWCI: 1.126

Cites: 40

Cited by: 37

Related to: 10