Work

Space charge layer effects in silicon studied by in situ surface transport

Year: 2019

Type: article

Abstract: Electronic properties of low dimensional structures on surfaces can be comprehensively explored by surface transport experiments. However, the surface sensitivity of this technique to atomic structures comes along with the control of bulk related electron paths and internal interfaces. Here we analyzed the role of Schottky-barriers and space charge layers for Si-surfaces. By means of a metal submonolayer coverage deposited on vicinal Si(1 1 1), we reliably accessed subsurface transport channels via angle- and temperature-dependent in situ transport measurements. In particular, high temperature treatments performed under ultra high vacuum conditions led to the formation of surface-near bulk defects, e.g. SiC-interstitials. Obviously, these defects act as p-type dopants and easily overcompensate lightly n-doped Si substrates.

Source: Journal of Physics Condensed Matter

DOI: 10.1088/1361-648x/ab094e

Authors: Frederik Edler, Ilio Miccoli, Herbert Pfnür, Christoph Tegenkamp

Institutions: Leibniz University Hannover, Chemnitz University of Technology

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $2,700

Funder: Deutsche Forschungsgemeinschaft