Work

Transient photoresponse of infrared photodetector based on Sb0.1Sn0.9Se2 ternary alloy

Year: 2019
Type: article
Abstract: In this article, we demonstrated the growth and optoelectronic application of Sb 0.1 Sn 0.9 Se 2 ternary alloy. The single crystals of Sb 0.1 Sn 0.9 Se 2 ternary alloy are grown by direct vapour transport technique. The grown compound has 2H–SnSe 2 type hexagonal lattice structure in which Sb +5 is well substituted on Sn +4 lattice sites. Subsequently, the photodetector is fabricated and explored under IR illumination (1088 nm) of different power intensity ranging from 1 to 80 mW cm −2 at room temperature (300 K). The detector shows excellent response with enhanced photoresponsivity of 84.22 mW A −1 and specific detectivity of 2.53 × 10 9 Jones. The temperature dependent photoresponse of photodetector in investigated in temperature range 210 to 300 K. The detector showed stable response in studied temperature range. The present finding on photodetector suggest the novel ternary composition for application as infrared photodetection.
Language: English
Open Access status: bronze
OpenAlex ID: W2919652020
FWCI: 0.361
Cites: 23
Cited by: 10
Related to: 10